IJD is emerging as cost-efficient and versatile thin-film fabrication technique for the fabrication of transition metal dichalcogenides thin films, such as molybdenum disulfide (MoS2).

We report a recent work [1] made at IMEM-CNR Institute of Materials for Electronics and Magnetism in Trento that demonstrated the deposition of homogenous and continuous films of stoichiometric MoS2 by IJD. This is paving the way for multiple applications solving well-known problems regarding the selenization process.

For more information on this process read the dedicated Application page or contact your local distributor or write to info@noivion.com


[1] Ghiami, A.; Timpel, M.; Chiappini, A.; Nardi, M.V.; Verucchi (2020), R. Synthesis of MoS2 Thin Film by Ionized Jet Deposition: Role of Substrate and Working Parameters. Surfaces 2020, 3, 683-693.