IJD is emerging as cost-efficient and versatile thin-film deposition technique for the fabrication of transition metal dichalcogenides thin films, such as molybdenum disulfide (MoS2).
A recent publication by IMEM-CNR Institute of Materials for Electronics and Magnetism (Trento, Italy) demonstrated the deposition of homogenous and continuous films of stoichiometric MoS2 [1] paving the way for applications using different substrates and TMDCs, such as other sulfides and selenides, solving well-known problems regarding the selenization process.
In another disrupting work IMEM-CNR scientists [2] demonstrated an IJD enabled process to produce MoS2 thin films with 2D electronic and optical properties establishing a solid base for the development of a large area and high throughput industrial process for 2D-like materials.