Molybdenum disulfide

IJD is emerging as cost-efficient and versatile thin-film deposition technique for the fabrication of transition metal dichalcogenides thin films, such as molybdenum disulfide (MoS2).

Recent publications [1] by IMEM-CNR Institute of Materials for Electronics and Magnetism, Trento unit demonstrated the deposition of homogenous and continuous films of stoichiometric MoS2 paving the way for applications using different substrates and TMDCs, such as other sulfides and selenides, solving well-known problems regarding the selenization process.


[1] Ghiami, A.; Timpel, M.; Chiappini, A.; Nardi, M.V.; Verucchi (2020), R. Synthesis of MoS2 Thin Film by Ionized Jet Deposition: Role of Substrate and Working Parameters. Surfaces 2020, 3, 683-693.